ALUMNI
- Dong-Gyu Jin / 2024. 02. /
[Thesis] Enhancement of Electrical/Synaptic Characteristics of IGZO based Artificial Synapse by Interface Trap Reduction for Neuromorphic Comoputing System
- June Park / 2022. 02. / SK hynix
[Thesis] Enhancement of Resistive Switching Reliability and Thermal Stability in RRAM and Reliability Effect on Neuromorphic System
- Seung-Geun Kim / 2022. 02. / SK hynix
[Thesis] 2D Channel based Optoelectronic and Neuromorphic Performance Enhancement: Infrared Detection, Steep Switching, and Hysteresis Modulation
- Seung-Geun Jung / 2022. 02. / Samsung Electronics
[Thesis] Source/Drain Contact Engineering for Emerging Device Technologies
- Seung-Hwan Kim / 2020. 08. / Korea Institute of Science and Technology
[Thesis] Effect of Fermi-Level Unpinning for Non-Alloyed Electrical Contacts
- Gwang-Sik Kim / 2019. 02. / Samsung Electronics
[Thesis] Schottky Barrier Height Engineering for Electrical Contacts of Semiconductors
- Eun-Young Park / 2024. 02. / SK hynix
[Thesis] Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor in Peri-Under-Cell(PUC) NAND Flash Memory
- Sang-Pill Kim / 2024. 02. / SK hynix
[Thesis] Optimization and Inverse Design of CFET with Coupling Machine Learning and Non-dominated Sorting Genetic Algorithms
- Min-Su Kim / 2023. 02. / SK hynix
[Thesis] Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer
- Seong-Hyun Hwang / 2023. 02. / SK hynix
[Thesis] Effective Threshold Voltage Tuning Technique for Steep-Slope 2D Atomic Threshold Switching Field-Effect Transistor
- Dong-Won Jang / 2021. 08. / Georgia Institute of Technology
[Thesis] Electrothermal Characterization and Optimization of Monolithic 3D Complementary FET
- Mu-Yeong Son / 2021. 02. / SK hynix
[Thesis] Improvement of DRAM Performance by Applying Metal-Interlayer-Semiconductor Source/Drain Contact Structure on DRAM Cell
- Tae-Hyun Kim / 2021. 02. / SK hynix
[Thesis] Spiking Neuron Using a Bipolar Electrochemical Metallization (ECM) Switch and Its Enhanced Spiking Properties through Filament Confinement
- Hyeok Jeon / 2021. 02. / SK hynix
[Thesis] Hysteresis Modulation on Two-Dimensional Semiconductor-based Ferroelectric Field-Effect Transistor by Interfacial Passivation Layer and Its Application in Optic Neural Networks
- Young-Hun Shin / 2021. 02. / Samsung Electronics
[Thesis] A Study on the Fabrication and Characterization of Strain Ge-on-Insulator nMOSFETs on Si Substrates
- Sul-Hwan Lee / 2021. 02. / SK hynix
[Thesis] Comprehensive Study of Off State Hot Carrier Degradation of Thick Gate Oxide pMOSFETs in DRAMs
- Jae-Hyeun Park / 2019. 02. / SK hynix
[Thesis] Nitrogen Induced Filament Confinement Technique for Highly Reliable Hafnium-based Electrochemical Metallization (ECM) Threshold Switch and Its Application to Flexible Logic Circuits
- Hwan-Jun Zang / 2017. 08. / SK hynix
[Thesis] High-Quality Ge Growth for Optical Interconnection
- Sun-Woo Kim / 2017. 08. / SK hynix
[Thesis] Effect of Interfacial Dipoles on GaAs-Based Metal-Interlayers-Semiconductor S/D Structure and Their Application in Contact Resistivity Reduction
- Juhan Ahn / 2017. 02. / University of Texas at Austin
[Thesis] Study of Contact Resistivity Improvement for Sub-14 nm n-type Si and Ge MOSFETs using Metal Nitrides-Interlayer-Semiconductor Source/Drain Structure
- Changho Shin / 2016. 08. / Samsung Electronics
[Thesis] Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune FinFET with Metal-Interlayer-Semiconductor Source/Drain Structure
- Jeong-Kyu Kim / 2015. 02. / Stanford University
[Thesis] Study on the Metal-Interfacial layer-Semiconductor Source/Drain Sturcture for High-Performance n-type Ge MOSFET