ALUMNI

  • Dong-Gyu Jin / 2024. 02. /
    [Thesis] Enhancement of Electrical/Synaptic Characteristics of IGZO based Artificial Synapse by Interface Trap Reduction for Neuromorphic Comoputing System
  • June Park / 2022. 02. / SK hynix
    [Thesis] Enhancement of Resistive Switching Reliability and Thermal Stability in RRAM and Reliability Effect on Neuromorphic System
  • Seung-Geun Kim / 2022. 02. / SK hynix
    [Thesis] 2D Channel based Optoelectronic and Neuromorphic Performance Enhancement: Infrared Detection, Steep Switching, and Hysteresis Modulation
  • Seung-Geun Jung / 2022. 02. / Samsung Electronics
    [Thesis] Source/Drain Contact Engineering for Emerging Device Technologies
  • Seung-Hwan Kim / 2020. 08. / Korea Institute of Science and Technology
    [Thesis] Effect of Fermi-Level Unpinning for Non-Alloyed Electrical Contacts
  • Gwang-Sik Kim / 2019. 02. / Samsung Electronics
    [Thesis] Schottky Barrier Height Engineering for Electrical Contacts of Semiconductors
  • Eun-Young Park / 2024. 02. / SK hynix
    [Thesis] Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor in Peri-Under-Cell(PUC) NAND Flash Memory
  • Sang-Pill Kim / 2024. 02. / SK hynix
    [Thesis] Optimization and Inverse Design of CFET with Coupling Machine Learning and Non-dominated Sorting Genetic Algorithms
  • Min-Su Kim / 2023. 02. / SK hynix
    [Thesis] Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer
  • Seong-Hyun Hwang / 2023. 02. / SK hynix
    [Thesis] Effective Threshold Voltage Tuning Technique for Steep-Slope 2D Atomic Threshold Switching Field-Effect Transistor
  • Dong-Won Jang / 2021. 08. / Georgia Institute of Technology
    [Thesis] Electrothermal Characterization and Optimization of Monolithic 3D Complementary FET
  • Mu-Yeong Son / 2021. 02. / SK hynix
    [Thesis] Improvement of DRAM Performance by Applying Metal-Interlayer-Semiconductor Source/Drain Contact Structure on DRAM Cell
  • Tae-Hyun Kim / 2021. 02. / SK hynix
    [Thesis] Spiking Neuron Using a Bipolar Electrochemical Metallization (ECM) Switch and Its Enhanced Spiking Properties through Filament Confinement
  • Hyeok Jeon / 2021. 02. / SK hynix
    [Thesis] Hysteresis Modulation on Two-Dimensional Semiconductor-based Ferroelectric Field-Effect Transistor by Interfacial Passivation Layer and Its Application in Optic Neural Networks
  • Young-Hun Shin / 2021. 02. / Samsung Electronics
    [Thesis] A Study on the Fabrication and Characterization of Strain Ge-on-Insulator nMOSFETs on Si Substrates
  • Sul-Hwan Lee / 2021. 02. / SK hynix
    [Thesis] Comprehensive Study of Off State Hot Carrier Degradation of Thick Gate Oxide pMOSFETs in DRAMs
  • Jae-Hyeun Park / 2019. 02. / SK hynix
    [Thesis] Nitrogen Induced Filament Confinement Technique for Highly Reliable Hafnium-based Electrochemical Metallization (ECM) Threshold Switch and Its Application to Flexible Logic Circuits
  • Hwan-Jun Zang / 2017. 08. / SK hynix
    [Thesis] High-Quality Ge Growth for Optical Interconnection
  • Sun-Woo Kim / 2017. 08. / SK hynix
    [Thesis] Effect of Interfacial Dipoles on GaAs-Based Metal-Interlayers-Semiconductor S/D Structure and Their Application in Contact Resistivity Reduction
  • Juhan Ahn / 2017. 02. / University of Texas at Austin
    [Thesis] Study of Contact Resistivity Improvement for Sub-14 nm n-type Si and Ge MOSFETs using Metal Nitrides-Interlayer-Semiconductor Source/Drain Structure
  • Changho Shin / 2016. 08. / Samsung Electronics
    [Thesis] Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune FinFET with Metal-Interlayer-Semiconductor Source/Drain Structure
  • Jeong-Kyu Kim / 2015. 02. / Stanford University
    [Thesis] Study on the Metal-Interfacial layer-Semiconductor Source/Drain Sturcture for High-Performance n-type Ge MOSFET