Hyun-Yong Yu is a professor in the department of Electrical Engineering at the Korea University since Feb 2012.
He received the B.S. degree in electrical engineering from Korea University, Seoul, Korea, in 2002, and the M.S., and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2004 and 2009,
respectively, for his work on selective heteroepitaxial growth of Germanium for monolithic integration of MOS field
-effect transistor (MOSFET)
and optical devices. From 2009 to 2010, he was a process engineer in Lam Research, Fremont, CA, where he worked
on process engineering research, development, modification, and evaluation for advanced semiconductor devices
especially on 32nm or below technology node. In 2010, he joined Intel Corporation, Hillsboro, OR, USA as PTD process
integration engineer.
He had worked on exploring and demonstrating the feasibility of new technology elements & integration schemes,
materials, process modules, and technology scaling for Cu/ low k interconnection.(14nm technology node)
Office : Innovation Building Room #507B
Phone : 82-2-3290-4830
Fax : 82-2-921-0544
Email : yuhykr@korea.ac.kr
Ph.D., Department of Electrical Engineering, Stanford University, Stanford, CA, USA, 2009
M.S., Department of Electrical Engineering, Stanford University, Stanford, CA, USA, 2004
B.S., Department of Electrical Engineering, Korea University, Seoul, Korea, 2002
Professor, School of Electrical Engineering, Korea University, Seoul, Korea
Associate Professor, School of Electrical Engineering, Korea University, Seoul, Korea
Assistant Professor, School of Electrical Engineering, Korea University, Seoul, Korea
Senior PTD process integration engineer, Intel Corporation, OR, USA
Senior process engineer, Lam Research Corporation, CA, USA
Research Assistant, Stanford University, CA, USA