CONFERENCE PUBLICATIONS

2024
  • Seong-Ji, Sang-pill Kim, Eun-young Park, Jun-hyeok Lee, Hae-yong Park, Hyeong-kyu Jin and Hyun-Yong Yu, "Impact of work-function variation on inverter characteristics of a gate-all-around complementary FET (CFET) for 3-nm technology nodes," KCS 2024 (Poster Presentation) (2024)
2023
  • Hae-Yong Park, and Hyun-Yong Yu, "Influence of Backside Power Delivery Network(BSPDN) process on Nano Sheet FET(NSFET) performance," KIEE 2023 (Poster Presentation) (2023)
  • Eun-Young Park, and Hyun-Yong Yu, "Investigation of Hydrogen Diffusion and Reliability of Peripheral transistor of 3D NAND," KIEE 2023 (Poster Presentation) (2023)
  • Sang-Pill Kim, and Hyun-Yong Yu, "Sensitivity analysis of Complementary FET (CFET) with machine learning approach," KIEE 2023 (Poster Presentation) (2023)
  • Sung-Ji Min, and Hyun-Yong Yu, "Influence of Process variations on the Electrical Performance of Nanosheet Gate-All-Around Complementary FET," KCS 2023 (Oral Presentation) (2023)
  • Dong-Gyu Jin, and Hyun-Yong Yu, "Improvement of Polarization Switching in Oxide-Based Ferroelectric Transistor through Interface Trap Reduction for Artificial Synapses," KCS 2023 (Poster Presentation) (2023)
  • Min-Su Kim, Seong-Hyun Hwang and Hyun-Yong Yu, "Improving the Contact Resistivity of TiSi2 through a Ta Interlayer," KCS 2023 (Poster Presentation) (2023)
2022
  • Euyjin Park, and Hyun-Yong Yu, "Low-temperature dopant activation of mesa structured Si for M3D intergration," KISM 2022 (Oral Presentation) (2022)
  • Seong-Hyun Hwang, and Hyun-Yong Yu, "Effect of Counter Electrode on Changing Threshold Voltage of Steep-Slope 2D Atomic Threshold Switching Field-Effect Transistor," KIEE 2022 (Poster Presentation) (2022)
  • Seong-Ji Min, and Hyun-Yong Yu, "Enhancement of Radiation Hardness by Adopting Metal-Interlayer-Semiconductor Source/Drain Contact Structure on Ge based SRAM Cell," KCS 2022 (Poster Presentation) (2022)
2021
  • Min-su Kim, Euyjin Park, and Hyun-Yong Yu, "Highly Reliable Resistive Switching via PtSe2 Insertion Layer for Electrochemical Metallization Threshold Switch," KIEE 2021 (Poster Presentation) (2021)
  • Sungjoo Song, Euyjin Park, Seung-Hwan Kim, and Hyun-Yong Yu, "Effect of Graphene oxide Interlayer on Schottky Barrier Height Reduction of Metal/n-Ge contact," KIEE 2021 (Poster Presentation) (2021)
  • Jong-Hyun Kim, Euyjin Park, and Hyun-Yong Yu, "p-type Si Source/Drain Contact Resistivity Reduction Technique through Schottky Barrier Height Modulation with Ultrathin Al2O3 interlayer," KIEE 2021 (Poster Presentation) (2021)
  • Dong-won Jang, Seung-Geun Jung, and Hyun-Yong Yu, "Analysis of Self-Heating Effects in Monolithic Complementary FET (CFET)," KCS 2021 (Poster Presentation) (2021)
2020
  • Sul-hwan Lee, Seung-Geun Jung, and Hyun-Yong Yu, "Comprehensive study of OFF-state hot carrier degradation of thick(50A) gate oxide pMOSFETs in DRAM," Nano Korea 2020 (Oral Presentation) (2020)
  • Taehyun Kim, Seung-Hwan Kim, Jae-Hyeun Park, June Park, and Hyun-Yong Yu, "An enhanced property of artificial neuron using EM threshold Switch with filament confinement technique," Nano Korea 2020 (Poster Presentation) (2020)
  • Hyeok Jeon, Seung-Geun Kim, June Park, Seung-Hwan Kim, and Hyun-Yong Yu, "The impact of APTES passivation in MoS2-based Ferroelectric field effect transistor for artificial synapse," Nano Korea 2020 (Poster Presentation) (2020)
  • Muyeong Son, Seung Geun Jung, Seung Hwan Kim, June Park, Seung Geun Kim and Hyun-Yong Yu, "Retention Time Improvement in a Saddle Fin-Based DRAM Core-Cell by Adopting MIS Contact Structure on Source and Drain," KCS 2020 (Poster Presentation) (2020)
  • Seung-Geun Jung and Hyun-Yong Yu, "Performance Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain structure on n-type Ge Junctionless FET," ICEIC 2020 (Poster Presentation) (2020)
  • Seung-Hwan Kim and Hyun-Yong Yu, "Fermi-Level Unpinning Using MoS2 Interlayer between Metal and Semiconductor for Source/Drain Contact," ICEIC 2020 (Poster Presentation) (2020)
2019
  • Euyjin Park and Hyun-Yong Yu, "Metal-Double Interlayer-Semiconductor Contact Structure for Contact Resistivity Reduction and Thermal Stability for the Application to Monolithic 3D Integration," The 50th KIEE Summer Conference 2019 (Poster Presentation) (2019)
  • Euyjin Park, Kyu Hyun Han, and Hyun-Yong Yu, "Reduction of MoS2 FET hysteresis and Improvement of Synaptic Behavior with APTES passivation effect," The 50th KIEE Summer Conference 2019 (Poster Presentation) (2019)
  • Euyjin Park and Hyun-Yong Yu, "Low Contact Resistivity and Thermally Stable Non-Alloyed S/D Contact Structure for Monolithic 3D Integration through Double Interlayer Insertion," NANO KOREA 2019 (Oral Presentation) (2019)
  • Kyu Hyun Han, Gwang-Sik Kim, June Park, Seung-Geun Kim, Jin-Hong Park and Hyun-Yong Yu, "Reduction of multilayered MoS2 transistors hysteresis with APTES passivation and enhanced synaptic Behavior," NANO KOREA 2019 (Poster Presentation) (2019)
  • Seung-Geun Jung and Hyun-Yong Yu, "RDF-Induced Performance Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain on n-type Germanium Junctionless Field-Effect Transistor," AWAD 2019 (Oral Presentation) (2019)
  • Euyjin Park, Seung-Hwan Kim, Jong Hyun Kim and Hyun-Yong Yu, "Metal-Double Interlayer-Semiconductor Contact Structure for Contact Resistivity Reduction and Thermal Stability for the Application to Monolithic 3D Integration," AWAD 2019 (Poster Presentation) (2019)
  • Kyu Hyun Han, June Park, Seung-Geun Kim, Dong Gyu Jin, Muyeong Son, Taehyun Kim, Hyeok Jeon and Hyun-Yong Yu, "Reduction of Hysteresis of MoS2 Transistors with APTES Passivation and Application for Improved Synaptic Behavior," AWAD 2019 (Poster Presentation) (2019)
  • Euyjin Park and Hyun-Yong Yu, "Nitrogen doping as a method for resistive switching characteristic improvement of TiO2 based ReRAM device," NCC 2019 (Poster Presentation) (2019)
  • Kyu Hyun Han, Gwang-Sik Kim, June Park, Seung-Geun Kim and Hyun-Yong Yu, "Enhanced Interface Quality of MoS2 FET by Dit reduction from APTES passivation," NCC 2019 (Poster Presentation) (2019)
  • Seung-Geun Jung, Mu-Yeong Son, Hyeok Jeon, Tae-Hyun Kim, Young-Hun Shin and Hyun-Yong Yu, "RDF/LER-Induced Performance Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain on n-Ge Junctionless Field-Effect Transistor," KCS 2019 (Oral Presentation) (2019)
  • Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, June Park and Hyun-Yong Yu, "Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain," KCS 2019 (Oral Presentation) (2019)
  • Euyjin Park, Jaehyeun Park, Donggyu Jin, Kyu Hyun Han and Hyun-Yong Yu, "Resistive Switching Characteristics Improvement in a TiO2-Based ReRAM Device by Nitrogen Doping," KCS 2019 (Oral Presentation) (2019)
2018
  • Jae-Hyeun Park and Hyun-Yong Yu, "Nitrogen-Doped Si-Based Volatile Threshold Switching Device with High Reliability and Low Power Operation," NANO KOREA 2018 (Oral Presentation) (2018)
  • Seung-Hwan Kim and Hyun-Yong Yu, "Effective Schottky Barrier Height Lowering Technique for InGaAs Contact," NANO KOREA 2018 (Oral Presentation) (2018)
  • Gwang-Sik Kim, Seung-Hwan Kim, June Park, Seung-Geun Kim, Seung Geun Jung, Euyjin Park, Jaehyeun Park, Kyu Hyun Han, Dong Gyu Jin, and Hyun-Yong Yu, "Schottky Barrier Height Control by Interlayer Insertion at Electrical Contacts of Multi-Layered MoS2," AWAD 2018 (Poster Presentation) (2018)
  • June Park, Gwang-Sik Kim, Seung-Hwan Kim, Seung-Geun Kim, Seung Geun Jung, Euyjin Park, Jaehyeun Park, Kyu Hyun Han, Dong Gyu Jin, and Hyun-Yong Yu, "Improvement of the resistive switching characteristic in a nitrogen doped TiOx-based ReRAM device," AWAD 2018 (Oral Presentation) (2018)
  • Seung-Hwan Kim and Hyun-Yong Yu, "Highly Conductive Filament and Fermi-level Unpinning Effect for Ultra-Low Contact Resistance Achievement," 3rd International Nanotechnology Conference & Expo (Oral Presentation) (2018)
  • Seung-Geun Kim and Hyun-Yong Yu, "Extremely Wide Detection Range MoS2 Phototransistor for use Novel Light Detecting Mechanism," 3rd International Nanotechnology Conference & Expo (Oral Presentation) (2018)
  • Jae-Hyeun Park and Hyun-Yong Yu, "Nitrogen-Doped Si-Based Volatile Threshold Switching Device with High Reliability and Low Power Operation," 3rd International Nanotechnology Conference & Expo (Oral Presentation) (2018)
  • Seung Geun Jung and Hyun-Yong Yu, "Analytical Study of 7nm n-type Germanium Junctionless Field-Effect Transistor with Metal-Interlayer-Semiconductor Source/Drain Structure," KCS 2018 (Poster Presentation) (2018)
2017
  • June Park and Hyun-Yong Yu, "Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor," 2017 KSDT Conference Fall (Oral Presentation) (2017)
  • Gwang-Sik Kim and Hyun-Yong Yu, "A Metal-Interlayer-Semiconductor Structure with High Thermal Stability," 2017 KSDT Conference Fall (Oral Presentation) (2017)
  • Seung Geun Jung and Hyun-Yong Yu, "Performance Evaluation of 7nm n-type Germanium Junctionless Field-Effect Transistor with Metal-Interlayer-Semiconductor Source/Drain Structure," IEEE EDSSC 2017 (Oral Presentation) (2017) [PDF]
  • Seung Geun Jung and Hyun-Yong Yu, "Simulation of Sub-10nm n-Germanium Junctionless Field-Effect Transistor Using Metal-Interlayer-Semiconductor Source/Drain Structure," NANO KOREA 2017 (Oral Presentation) (2017)
  • Gwang-Sik Kim and Hyun-Yong Yu, "Study of Thermal Stability of Metal-Interlayer-Semiconductor Structure for Metal/n-Ge contact," NANO KOREA 2017 (Oral Presentation) (2017)
  • June Park, Seung-Hwan Kim, Sun-Woo Kim, and Hyun-Yong Yu, "Threshold Voltage Adjustment on MoS2 Field-Effect Transistor (FET) by Dielectric Capping Layer," Nanotech France 2017 (Oral Presentation) (2017)
  • Gwang-Sik Kim and Hyun-Yong Yu, "Thermally Stable Metal-Interlayer-Semiconductor Structure for Source/Drain Contact of Germanium n-channel Transistors," Nanotech France 2017 (Oral Presentation) (2017)
  • Seung-Geun Kim and Hyun-Yong Yu, "Low Temperature Doping Process of SiGe Film for Monolithic 3-D Integration," 2017 KSDT Conference Spring (Oral Presentation) (2017)
  • Seung-Geun Jung and Hyun-Yong Yu, "Simulation of n-type Germanium Enhancement Mode Junctionless Field-Effect Transistor Using Metal-Interlayer-Semiconductor Source/Drain Structure," 2017 KSDT Conference Spring (Oral Presentation) (2017)
  • Sun-Woo Kim, June Park, Hwan-jun Zang, Gwang-Sik Kim, Min Woo Ha, Sang Soo Park, Choon Hwan Kim, and Hyun-Yong Yu, "Analytical Study of Bowing Effect in Fluorocarbon Plasma Etching for Nanoscale Trenches Using Polymer Re-emission and Re-deposition Model," KCS 2017 (Oral Presentation) (2017)
  • Seung-Hwan Kim, and Hyun-Yong Yu, "Metal-Interlayer-Semiconductor Structure Using Al-Doped ZnO for Non-Alloyed Ohmic Contacts on Silicon," KCS 2017 (Oral Presentation) (2017)
  • June Park, Seung-Hwan Kim, Sun-Woo Kim, and Hyun-Yong Yu, "The Effect of Dielectric Capping Layer on Few-layer MoS2 Field-Effect Transistor (FET)," KCS 2017 (Poster Presentation) (2017)
2016
  • Sun-Woo Kim, Gwang-Sik Kim, Seung-Hwan Kim, and Hyun-Yong Yu, "A Study of Contact Resistivity Reduction Effect of Interfacial Dipole in Metal-Double Interlayers-Semiconductor Structure," ENGE 2016 (Oral Presentation) (2016)
  • Seung-Geun Jung, Jinsik Kim, Kyo Seon Hwang, Hyun-Yong Yu, and Byung Chul Lee, "Performance Analysis and Design of FET-Embedded Capacitive Micromachined Ultrasonic Transducers (CMUTs)," 2016 IEEE IUS (Oral Presentation) (2016)
  • Seung-Geun Kim, Seung-Hwan Kim, Sun-Woo Kim, Gwang-Sik Kim, June Park, and Hyun-Yong Yu, "Fermi-level Unpinning Using Metal-Interlayer-Semiconductor Structure for SiGe Raised Source/Drain Contact," IVC-20 (Oral Presentation) (2016)
  • Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, and Hyun-Yong Yu, "Source/Drain Contact Resistance Reduction through Al-Doped ZnO Interlayer to Metal-Interlayer-GaAs Contact Structure," 229th ECS Meeting (Oral Presentation) (2016) [PDF]
  • Gwang-Sik Kim, Seung-Hwan Kim, June Park, Sun-Woo Kim, and Hyun-Yong Yu, "Formation of Low-Resistivity Metal/Germanium Contact with Ultra-Thin Interlayer and Plasma Oxidation for n-Channel Germanium FET," 229th ECS Meeting (Oral Presentation) (2016) [PDF]
  • Hwan Jun Zang and Hyun-Yong Yu, "Dark Current Suppression of Germanium Photodiode Using Metal-Interlayer-Semiconductor-Metal Structure with TiO2 Interlayer," 229th ECS Meeting (Oral Presentation) (2016)
  • Chang Ho Shin, and Hyun-Yong Yu, "The Study of Random Dopant Fluctuation (RDF) Effects for Varying Fin Height on 10-nm n-Type Si FinFET," 2016 MRS Spring Meeting & Exhibit (Poster Presentation) (2016)
  • Juhan Ahn, and Hyun-Yong Yu, "The Metal-Interlayer-Semiconductor Source/Drain with Contact Metal of Tantalum Nitride (TaN) for 7 nm n-type Ge FinFET," 2016 MRS Spring Meeting & Exhibit (Poster Presentation) (2016)
  • Gwang-Sik Kim, and Hyun-Yong Yu, "Reverse Current Improvement of Metal/n-Ge Contact with TiO2 Interlayer and Plasma Pre-Oxidation," KCS 2016 (Oral Presentation) (2016)
  • Juhan Ahn, and Hyun-Yong Yu, "Impact of Metal Nitride on Contact Resistance in Metal-Interlayer-Semiconductor Source/Drain," KCS 2016 (Poster Presentation) (2016)
2015
  • Chang Ho Shin, Joohan Ahn, and Hyun-Yong Yu, "Random Dopant Fluctuation Effects on Sub-10 nm Si-based n-type Rectangular FinFET with Metal-Interlayer-Semiconductor Source/Drain," AWAD 2015 (Oral Presentation) (2015)
  • Seung-Hwan Kim, Sun-Woo Kim, Gwang-Sik Kim, Jin-Hong Park and Hyun-Yong Yu, "Ar Plasma Treatment for III-V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction," IFFM 2015 (Oral Presentation) (2015)
  • Seung-Hwan Kim, Jeong-Kyu Kim, Gwang-Sik Kim, Chang-Hwan Choi, and Hyun-Yong Yu, "Efficacy of Ge Passivation with Metal-Interlayer-Semiconductor Structure on III-V FET Source/Drain Contact Resistance Reduction," 2015 MRS Spring Meeting & Exhibit (Oral Presentation) (2015)
2014
  • Gwang-Sik Kim, Jeong-Kyu Kim, Seung-Hwan Kim, Sang Soo Park, Jong Hoon Lee, and Hyun-Yong Yu, "Analytical Study of Radical Induced Ash Damage to Low-k Porous SiOCH Sidewall by O-contained Plasmas," 2014 MRS Fall Meeting & Exhibit (Oral Presentation) (2014)
  • Jaesung Jo, Hyunjae Lee, Hyun-Yong Yu, Woo Young Choi, and Changhwan Shin, "Fabrication of a Ferroelectric Capacitor for sub-60-mV/dec CMOS Devices," AWAD 2014 (Oral Presentation) (2014)
  • Jeong-Kyu Kim, Gwang-Sik Kim, Hwan-Jun Zang, Changhwan Shin, and Hyun-Yong Yu, "Analytical study of Metal-Interlayer-Semiconductor structure for ultra low contact resistance with heavily doped n+ ZnO interlayer," 2014 MRS Spring Meeting & Exhibit (Oral Presentation) (2014)
2010
  • M. Cengiz Onbasli, A. Yesilyurt, Hyun-Yong Yu, A.M. Nayfeh, A.K. Okyay, "Silicon-Germanium multi-quantum wells for extended functionality and lower cost integration," 23rd Annual Meeting of the IEEE Photonics Society, Photonics No.5698995, pp.530-531 (2010)
  • (Invited talk) S.-L. Cheng, J. Lu, G. Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi, "Characterizations of direct band photoluminescence and electroluminescence from epi-Ge on Si," ECS 218th meeting, SiGe symposium (2010) [PDF]
  • W.-S. Jung, J.-H Park, H. Shim, Hyun-Yong Yu, and K. C. Saraswat, "Fabrication of Germanium On Insulator at low temperature using metal induced eutectic melt and interfacial oxide layer modulation," 2010 MRS Fall Meeting (2010)
2009
  • Hyun-Yong Yu, M. Kobayashi, W. Jung, Y. Nishi, K.C. Saraswat, "High Performance n-MOSFETs with Novel Source/Drain on Selectively grown Ge on Si for Monolithic Integration," Process Technology, IEEE International Electron Devices Meeting (IEDM 2009), Boltimore, MD, Dec 7-9 (2009) [PDF]
  • Hyun-Yong Yu, S. Ren, M. Kobayashi, D. A. B. Miller, Y. N. ishi, K.C.Sarasawt, "Effect of uniaxial strain on Ge p-i-n photodiodes integrated on Si," IEEE Lasers and Electro Optics Society Meeting (LEOS 2009), Belek-Antalya, Turkey, TuCC 5, Oct 4-8 (2009)
  • A.K. Okyay, M. Cengiz Onbasli, B. Ercan, Hyun-Yong Yu, S. Ren, D.A.B. Miller, K.C. Saraswat, A.M. Nayfeh, "High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared," IEEE Lasers and Electro Optics Society Meeting (LEOS 2009), Belek-Antalya, Turkey, TuCC 5, Oct 4-8 (2009)
2008
  • J.-H. Park, M. Tada, D. Kuzum, P. Kapur, Hyun-Yong Yu, H-.S. Philip Wong, and K. C. Saraswat, "Low Temperature (??380°C) and High Performance Ge CMOS Technology with Novel Source/Drain by Metal-Induced Dopants Activation and High-K/Metal Gate Stack for Monolithic 3D Integration," Process Technology, IEEE International Electron Devices Meeting (IEDM 2008), Paper 16.1, San Francisco, CA, Dec 15-17 (2008) [PDF]
  • J.-H.Park, M. Tada, Hyun-Yong Yu, D. Kuzum, Y. Na, and K. C. Saraswat, "Low Temperature Boron Activation in Amorphous Ge for Three Dimensional Integrated Circuits (3D-ICs) using Ni-induced Crystallization," ECS 2008 Fall Meeting, Symposium on SiGe and Ge: Materials, Processing, and Devices 3: Processing, Paper 17.3, Honolulu, HI, Oct 12-17 (2008) [PDF]
  • Hyun-Yong Yu, J.-H. Park, A. Okyay, and K. C. Saraswat, "Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing," ECS 2008 Fall Meeting, Symposium on SiGe and Ge: Materials, Processing, and Devices 3: Epitaxy, Paper 15.3, Honolulu, HI, Oct 12-17 (2008) [PDF]
  • K. Saraswat, D. Kim, T. Krishnamohan, D. Kuzum, A. Okyay, A. Pethe, and Hyun-Yong Yu, "Germanium for High performance MOSFETs and Optical Interconnects," ECS 2008 Fall Meeting, Symposium on SiGe and Ge: Honolulu, HI, Oct 12-17 (2008) [PDF]
  • J.-H. Park, P. Kapur, H. Peng, M. Tada, Hyun-Yong Yu, and K. C. Saraswat, "Low Temperature Single Crystal Germanium Growth on Amorphous Substrate using Nano-patterning Technique and Metal(Au)-induced Lateral Crystallization (M(Au)ILC)," 2008 MRS Spring Meeting, Symposium on Materials and Processes for Advanced Interconnects for Microelectronics, Paper N6.8, San Francisco, CA, Mar 26-30 (2008)
  • Hyun-Yong Yu, A. Okyay, J.-H. Park, and K. C. Saraswat, "Selective Germanium Epitaxial Growth for Optical Device Integration," 2008 MRS Spring Meeting, Symposium on Materials and Processes for Advanced Interconnects for Microelectronics, Paper N6.9, San Francisco, CA, Mar 26-30 (2008)