JOURNAL PUBLICATIONS

2024
  • Kyu-Hyun Han, Seung-Geun Kim, Seung-Hwan Kim, Jong-Hyun Kim, Seong-Hyun Hwang, Min-Su Kim, Sungjoo Song, and Hyun-Yong Yu,* "Dielectric Interface Engineering Using Aminosilane Coupling Agent for Enhancement of Negative Differential Resistance Phenomenon," Materials Today Advances (IF: 10), Vol.21, pp.100475 (2024) [PDF] [Supplement]
  • Kyu-Hyun Han, Seung-Hwan Kim, Seung-Geun Kim, Jong-Hyun Kim, Sungjoo Song, and Hyun-Yong Yu,* "Charge Transfer Mechanism for Realization of Double Negative Differential Transconductance," npj 2D materials and applications (IF: 9.7), Vol.8, No.15 (2024) [PDF] [Supplement]
2023
  • Dong-Gyu Jin, and Hyun-Yong Yu,* "First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing," Small ( ‹ JCR Top 7%, IF: 13.3), pp.202309467 (2023) [PDF] [Supplement]
  • Sung-joo Song,† Seung-Hwan Kim,† Kyu-Hyun Han, Hyung-jun Kim, and Hyun-Yong Yu,* "In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors," ACS Applied Materials & Interfaces (IF: 9.5), Vol.15, No.49, pp.57879-57889 (2023) [PDF] [Supplement] (†equal contribution)
  • Jong-Hyun Kim, Seung-Geun Kim, Seung-Hwan Kim, Kyu-Hyun Han, Jiyoung Kim, and Hyun-Yong Yu,* "Highly Tunable Negative Differential Resistance Device based on Insulator-to-Metal Phase Transition of Vanadium Dioxide," ACS Applied Materials & Interfaces (IF: 10.383), Vol.15, No.26, pp.31608-31616 (2023) [PDF] [Supplement]
  • Min-Su Kim,† Seong-Hyun Hwang,† Seung-Hwan Kim, Jong-Hyun Kim, Euyjin Park, Kyu-Hyun Han, and Hyun-Yong Yu,* "Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process after Silicidation of TiSi2 through Ta Interlayer for diffusion barrier," IEEE Electron Device Letters (IF: 4.816), Vol.44, pp.1040-1043 (2023) [PDF] (†equal contribution)
  • Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin and Hyun-Yong Yu,* "Effective Threshold Voltage Modulation Technique for Steep-Slope 2D Atomic Threshold Switching Field-Effect Transistor," Materials Today Advances (IF: 9.918), Vol.18, pp.100367 (2023) [PDF] [Supplement]
  • Dong-Gyu Jin, Seung-Geun Kim, Hyeok Jeon, Euyjin Park, Seung-Hwan Kim, Jiyoung Kim, and Hyun-Yong Yu,* "Improvement of Polarization Switching in Ferroelectric Transistor by Interface Trap Reduction for Brain-Inspired Artificial Synapses," Materials Today Nano ( ‹ JCR Top 10%, IF: 13.364), Vol.22, pp.100320 (2023) [PDF] [Supplement]
  • Sungjoo Song,† Seung-Hwan Kim,† Seung-Geun Kim, Kyu-Hyun Han, Hyung-jun Kim, and Hyun-Yong Yu,* "Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure," Journal of Alloys and Compounds ( ‹ JCR Top 10%, IF: 6.371), Vol.937, pp.168327 (2023) [PDF] [Supplement] (†equal contribution)
  • Min-Su Kim, Euyjin Park, Seung-Geun Kim, Jae-Hyeun Park, Seung-Hwan Kim, Kyu-Hyun Han, and Hyun-Yong Yu,* "Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer," Advanced Materials Interfaces (IF: 6.389), pp.2202296 (2023) [PDF] [Supplement]
2022
  • June Park, Euyjin Park and Hyun-Yong Yu,* "Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor," Applied Surface Science ( ‹ JCR Top 5%, IF: 7.392), Vol.603, pp.154307 (2022) [PDF] [Supplement]
  • Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park and Hyun-Yong Yu,* "Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics," IEEE Access (IF: 3.367), Vol.10, pp.41112-41118 (2022) [PDF]
  • Seung-Geun Jung, Jeong-Kyu Kim, and Hyun-Yong Yu,* "Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for sub-3-nm Technology Node," IEEE Transactions on Electron Devices (IF: 2.913), Vol.69, pp.990-935 (2022) [PDF]
2021
  • June Park, Euyjin Park, Seung-Geun Kim, Dong-Gyu Jin, and Hyun-Yong Yu,* "Analysis of the Thermal Degradation Effect on HfO2-based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System," ACS Applied Electronic Materials (IF: 3.314), pp. 5584-5591 (2021) [PDF] [Supplement]
  • Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, and Hyun-Yong Yu,* "Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS with Nanosheet FET," IEEE Journal of the Electron Devices Society (IF: 2.66), Vol. 10, pp.78-82 (2021) [PDF]
  • Dongwon Jang, Seung-Geun Jung, Seong-Ji Min, and Hyun-Yong Yu,* "Electrothermal Characterization and Optimization of Monolithic 3D Complementary FET (CFET)," IEEE Access (IF: 3.367), Vol. 9, pp.158116 - 158121 (2021) [PDF]
  • Uikyu Chae, Hyogeun Shin, Nakwon Choi, Mi-Jung Ji, Hyun-Mee Park, Soo Hyun Lee, Jiwan Woo, Yakdol Cho, Kanghwan Kim, Seulkee Yang, Min-Ho Nam, Hyun-Yong Yu, and Il-Joo Cho "Bimodal neural probe for highly co-localized chemical and electrical monitoring of neural activities in vivo," Biosensors and Bioelectronics ( ‹ JCR Top 5%, IF: 10.618), Vol.191, pp.113473 (2021) [PDF] [Supplement]
  • Dong-Gyu Jin, Seung-Hwan Kim, Seung-Geun Kim, June Park, Euyjin Park, and Hyun-Yong Yu,* "Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton-Electron Coupling Effect in a Solid-State Electrolyte-Gated Transistor," Small ( ‹ JCR Top 10%, IF: 11.459), pp.202100242 (2021) [PDF] [Supplement]
  • Ui-Jin Jeong, Jungpyo Lee, Namsun Chou, Kanghwan Kim, Hyogeun Shin, Uikyu Chae, Hyun-Yong Yu and Il-Joo Cho, "A minimally invasive flexible electrode array for simultaneous recording of ECoG signals from multiple brain regions," Lab on a Chip ( ‹ JCR Top 10%, IF: 6.799), Vol.21, pp.2383-2397 (2021) [PDF] [Supplement]
  • Seung-Geun Kim, Seung-Hwan Kim, Gwang-Sik Kim, Hyeok Jeon, Taehyun Kim, and Hyun-Yong Yu,* "Steep-Slope Gate-connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors," Advanced Science ( ‹ JCR Top 5%, IF: 15.84), pp.2100208 (2021) [PDF] [Supplement]
  • Muyeong Son,† Seung Geun Jung,† Seung-Hwan Kim, Euyjin Park, Sul-Hwan Lee, and Hyun-Yong Yu,* "Enhancement of DRAM Performance by Adopting Metal-Interlayer-Semiconductor Source/Drain Contact Structure on DRAM Cell," IEEE Transactions on Electron Devices (IF: 2.913), Vol.68, pp.2275 - 2280 (2021) [PDF] (†equal contribution)
  • Seung-Geun Jung, Euyjin Park, Changhwan Shin, and Hyun-Yong Yu,* "LER-induced random variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain Structure on n-type Ge Junctionless FinFETs," IEEE Transactions on Electron Devices (IF: 2.913), Vol.68, pp.1340 - 1345 (2021) [PDF]
  • Taehyun Kim,† Seung-Hwan Kim,† Jae-Hyeun Park, June Park, Euyjin Park, Seung-Geun Kim, and Hyun-Yong Yu,* "An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement," Advanced Electronic Materials (IF: 6.593), Vol.7, pp.2000410 (2021) [PDF][Supplement] (†equal contribution)
2020
  • Hyeok Jeon,† Seung-Geun Kim,† June Park, Seung-Hwan Kim, Euyjin Park, Jiyoung Kim, and Hyun-Yong Yu,* "Hysteresis modulation on van der Waals-based ferroelectric field-effect transistor by interfacial passivation technique and its application in optic neural networks," Small, ( ‹ JCR Top 10%, IF: 13.281), Vol.16, pp.2004371 (2020) [PDF][Supplement] (†equal contribution)
  • Euyjin Park, Seung-Hwan Kim, and Hyun-Yong Yu,* "Schottky Barrier Engineering with a Metal Nitride-Double Interlayer-Semiconductor Contact Structure to Achieve High Thermal Stability and Ultralow Contact Resistivity," Applied Surface Science, ( ‹ JCR Top 5%, IF: 6.707), Vol.531, pp.147329 (2020) [PDF] [Supplement]
  • Uikyu Chae, Hyun-Yong Yu, Changhyuk Lee, and Il-Joo Cho "A Hybrid RF MEMS Switch Actuated by the Combination of Bidirectional Thermal Actuations and Electrostatic Holding," IEEE Transactions on Microwave Theory and Techniques, (IF: 3.599), Vol.68, pp.3461 - 3470 (2020) [PDF]
  • Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Akshay Sahota, Kihyun Kim, Hyun-Yong Yu, Pil-Ryung Cha, Chadwin D. Young, Rino Choi, Jinho Ahn, and Jiyoung Kim "A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films," Materials, (IF: 3.623), Vol.13, pp.2968 (2020) [PDF]
  • Seung-Geun Jung, Sul-Hwan Lee, Choong-Ki Kim, Min-Soo Yoo, and Hyun-Yong Yu,* "Analysis of Drain Linear Current Turn-Around Effect in OFF-State Stress Mode in pMOSFET," IEEE Electron Device Letters, (IF: 4.187), Vol.41, pp.804-807 (2020) [PDF]
  • Kwan-Ho Kim, Hyung-Youl Park, Jaewoo Shim, Gicheol Shin, Maksim Andreev, Jiwan Koo, Gwangwe Yoo, Kilsu Jung, Keun Heo, Yoonmyung Lee, Hyun-Yong Yu, Kyung Rok Kim, Jeong Ho Cho, Sungjoo Lee, and Jin-Hong Park, "A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory," Nanoscale Horizons, (IF: 10.989), Vol.5, pp.654-662 (2020) [PDF]
  • Taikyu Kim, Jeong-Kyu Kim, Baekeun Yoo, Hongwei Xu, Sungyeon Yim, Seung-Hwan Kim, Hyun-Yong Yu, and Jae Kyeong Jeong, "Improved Switching Characteristics of p-Type Tin Monoxide Field-Effect Transistors through Schottky Energy Barrier Engineering," Journal of Materials Chemistry C, (IF: 7.393), Vol.8, pp.201-208 (2020) [PDF]
2019
  • Seung-Geun Kim, Seung-Hwan Kim, June Park, Gwang-Sik Kim, Jae-Hyeun Park, Krishna C. Saraswat, Jiyoung Kim, and Hyun-Yong Yu,* "Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multi-Level Optic-Neural Synapse," ACS Nano, Vol.13, No.9, pp.10294-10300 (2019) [PDF] [Supplement]
  • Seung-Hwan Kim, Kyu Hyun Han, Euyjin Park, Seung-Geun Kim, and Hyun-Yong Yu,* "Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact," ACS Applied Materials & Interfaces, Vol.11, No.37, pp.34084-34090 (2019) [PDF] [Supplement]
  • June Park,† Euyjin Park,† Sungho Kim, and Hyun-Yong Yu,* "Nitrogen-Induced Enhancement of Synaptic Weight Reliability in Titanium-Oxide-based Resistive Artificial Synapse and Demonstration of Reliability Effect on Neuromorphic System," ACS Applied Materials & Interfaces, Vol.11, No.35, pp.32178-32185 (2019) [PDF] [Supplement] (†equal contribution)
  • Seung-Geun Jung, and Hyun-Yong Yu,* "Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure," IEEE Journal of the Electron Devices Society, Vol.7, pp.1119-1124 (2019) [PDF]
  • Jinok Kim, Keun Heo, Dong-Ho Kang, Changhwan Shin, Sungjoo Lee, Hyun-Yong Yu, and Jin-Hong Park, "Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique," Advanced Science, Vol.6, No.21, pp.1901255-1901262 (2019) [PDF] [Supplement]
  • Jaewoo Shim, Sung woon Jang, Ji-Hye Lim, Hyeongjun Kim, Dong-Ho Kang, Kwan-Ho Kim, Seunghwan Seo, Keun Heo, Changhwan Shin, Hyun-Yong Yu, Sungjoo Lee, Dae-Hong Ko, and Jin-Hong Park, "Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits," Nanoscale, Vol.11, No. 27, pp.12871-12877 (2019) [PDF] [Supplement]
  • Kyu Hyun Han,† Gwang-Sik Kim,† June Park, Seung-Geun Kim, Jin-Hong Park, and Hyun-Yong Yu,* "Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3aminopropyltriethoxysilane (APTES) Passivation and Its Application for Improved Synaptic Behavior," ACS Applied Materials & Interfaces, Vol.11, No.23, pp.20949-20955 (2019) [PDF] [Supplement] (†equal contribution)
  • Tae In Lee, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Seung-Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Yong Yu, and Byung Jin Cho, "Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 with Record-Low Leakage Current," IEEE Electron Device Letters, Vol.40, No.4, pp.502-505 (2019) [PDF]
  • Jae-Hyeun Park, Seung-Hwan Kim, Seung-Geun Kim, Keun Heo, and Hyun-Yong Yu,* "Nitrogen Induced Filament Confinement Technique for a Highly Reliable Hafnium-based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits," ACS Applied Materials & Interfaces, Vol.11, No.9, pp.9182-9189 (2019) [PDF] [Supplement]
  • Seung-Hwan Kim, Kyu Hyun Han, Gwang-Sik Kim, Seung-Geun Kim, Jiyoung Kim, and Hyun-Yong Yu,* "Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure," ACS Applied Materials & Interfaces, Vol.11, No.6, pp.6230-6237 (2019) [PDF] [Supplement]
  • Gwang-Sik Kim, Tae In Lee, Byung Jin Cho, and Hyun-Yong Yu,* "Schottky Barrier Height Modulation of Metal-Interlayer-Semiconductor Structure Depending on Contact Surface Orientation for Multi-Gate Transistors," Applied Physics Letters, Vol.114, No.1, pp.012102 (2019) [PDF]
2018
  • Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, and Hyun-Yong Yu,* "Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-type SiGe Source/Drain," IEEE Electron Device Letters, Vol.39, No.12, pp.1828-1831 (2018) [PDF]
  • Jeong-Kyu Kim,† Seung-Hwan Kim,† Taikyu Kim, and Hyun-Yong Yu,* "Universal Metal-Interlayer-Semiconductor Contact Modeling Considering Interface State Effect on Contact Resistivity Degradation," IEEE Transactions on Electron Devices, Vol.65, No.11, pp.4982-4987 (2018) [PDF] (†equal contribution)
  • Jaemin Shin, Eunah Ko, June Park, Seung-Geun Kim, Jae Woo Lee, Hyun-Yong Yu, and Changhwan Shin, "Super steep-switching (SS = 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device," Applied Physics Letters, Vol.113, No.10, p.102104 (2018) [PDF]
  • Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, and Hyun-Yong Yu,* "Effective Schottky Barrier Height Lowering Technique for InGaAs Contact Scheme: DMIGS and Dit Reduction and Interfacial Dipole Formation," Applied Surface Science, Vol.453, pp.48-55 (2018) [PDF] [Supplement]
  • Seung-Hwan Kim, Gwang-Sik Kim, June Park, Changmin Lee, Hyoungsub Kim, Jiyoung Kim, Joon Hyung Shim, and Hyun-Yong Yu,* "Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement," ACS Applied Materials & Interfaces, Vol.10, No.31, pp.26378-26386 (2018) [PDF] [Supplement]
  • Seung-Geun Jung, Seung-Hwan Kim, Gwang-Sik Kim, and Hyun-Yong Yu,* "Effects of Metal-Interlayer-Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs," IEEE Transactions on Electron Devices, Vol.65, No.8, pp.3136-3141 (2018) [PDF]
  • Gwang-Sik Kim, Seung-Hwan Kim, June Park, Kyu Hyun Han, Jiyoung Kim, and Hyun-Yong Yu,* "Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States," ACS Nano, Vol.12, No.6, pp.6292-6300 (2018) [PDF] [Supplement]
  • Sun-Woo Kim, Hwan-Jun Zang, June Park, Gwang-Sik Kim, Hyun-Yong Yu,* Minwoo Ha, Kyungbo Ko, Sang Soo Park, and Choon Hwan Kim "Analytical Study of Polymer Deposition Distribution for Two-Dimensional Trench Sidewall in Low-k Fluorocarbon Plasma Etching Process," Journal of Vacuum Science and Technology B, Vol.36, No.1, p.011802 (2018) [PDF]
2017
  • Gwang-Sik Kim, Seung-Hwan Kim, Tae In Lee, Byung Jin Cho, Changhwan Choi, Changhwan Shin, Joon Hyung Shim, Jiyoung Kim, and Hyun-Yong Yu,* "Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-type Germanium," ACS Applied Materials & Interfaces, Vol.9, No.41, pp.35988-35997 (2017) [PDF] [Supplement]
  • Yujin Seo, Choog Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun-Yong Yu, Yang Kyu Choi and Byung Jin Cho, "Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks," IEEE Transactions on Electron Devices, Vol.64, No.10, pp.3998-4004 (2017) [PDF]
  • Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jung Min Moon, Wan Sik Hwang, Hyun-Yong Yu, and Byung Jin Cho, "Fermi Level De-pinning in Ti/GeO2/n-Ge via the Interfacial Reaction between Ti and GeO2," IEEE Transactions on Electron Devices, Vol.64, No.10, pp.4242-4245 (2017) [PDF]
  • Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo-Eun Park, Wan Sik Hwang, Hyungjin Kim, Hyun-Yong Yu, and Byung Jin Cho, "The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks," IEEE Transactions on Electron Devices, Vol.64, No.8, pp.3303-3307 (2017) [PDF]
  • June Park, Dong-Ho Kang, Jong-Kook Kim, Jin-Hong Park, and Hyun-Yong Yu,* "Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field Effect Transistor," IEEE Electron Device Letters, Vol.38, No.8, pp.1172-1175 (2017) [PDF]
  • Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, Sun-Woo Kim, June Park, and Hyun-Yong Yu,* "An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si1-xGex Films for Non-Alloyed Ohmic Contact," Journal of Nanoscience and Nanotechnology, Vol.17, No.10, pp.7323-7326 (2017) [PDF]
  • Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, Choong Ki Kim, Hyun-Yong Yu, Wan Sik Hwang, and Byung Jin Cho, "Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film," IEEE Transactions on Electron Devices, Vol.64, No.6, pp.2599-2603 (2017) [PDF]
  • Tae In Lee, Yujin Seo, Jungmin Moon, Hyun Jun Ahn, Hyun-Yong Yu, Wan Sik Hwang, and Byung Jin Cho, "Lowering the Effective Work Function via Oxygen Vacancy Formation on the GeO2/Ge Interface," Solid-State Electronics, Vol.130, pp.57??2 (2017) [PDF]
  • Juhan Ahn, Jeong-Kyu Kim, Jong-Kook Kim, Jinok Kim, Jin-Hong Park, and Hyun-Yong Yu,* "Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-type Si FinFET," Journal of Nanoscience and Nanotechnology, Vol.17, No.5, pp.3084??088 (2017) [PDF]
2016
  • Gwang-Sik Kim, Sun-Woo Kim, Seung-Hwan Kim, June Park, Yujin Seo, Byung Jin Cho, Changhwan Shin, Joon Hyung Shim, and Hyun-Yong Yu,* "Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack," ACS Applied Materials & Interfaces, Vol.8, No.51, pp.35419-35425 (2016) [PDF] [Supplement]
  • Sun-Woo Kim, Seung-Hwan Kim, Gwang-Sik Kim, Changhwan Choi, Rino Choi, and Hyun-Yong Yu,* "The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction," ACS Applied Materials & Interfaces, Vol.8, No.51, pp.35614??5620 (2016) [PDF] [Supplement]
  • Hyunwoo Choi, Hyunjae Lee, June Park, Hyun-Yong Yu, Tae Geun Kim, and Changhwan Shin, "Experimental Evidence of Negative Quantum Capacitance in Topological Insulator for Sub-60-mV/decade Steep Switching Device," Applied Physics Letters, Vol.109, No.20 pp.203505 (2016) [PDF]
  • Changho Shin, Jeong-Kyu Kim, Gwang-Sik Kim, Hyunjae Lee, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, and Hyun-Yong Yu,* "Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain," IEEE Transactions on Electron Devices, Vol.63, No.11, pp.4167-4172 (2016) [PDF]
  • Seung-Hwan Kim, Gwang-Sik Kim, Seyong Oh, Jin-Hong Park, and Hyun-Yong Yu,* "Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration," Journal of Nanoscience and Nanotechnology, Vol.16, No.12, pp.12764-12767 (2016) [PDF]
  • Yongkook Park, Hyung-Youl Park, Dong-Ho Kang, Gwang-Sik Kim, Donghwan Lim, Hyun-Yong Yu, Changhwan Choi, and Jin-Hong Park "The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector," Journal of Nanoscience and Nanotechnology, Vol.16, No.11, pp.11745-11749 (2016) [PDF]
  • Gwang-Sik Kim, Sun-Woo Kim, Hwan-Jun Zang, Minwoo Ha, Sang Soo Park, Choon Hwan Kim, and Hyun-Yong Yu,* "2-Dimensional Analysis of Plasma Ashing Damage Induced by Oxygen-Based Plasmas along Nanopores in SiOCH Film for a Nanoscale BEOL Process," Journal of Nanoscience and Nanotechnology, Vol.16, No.11, pp.11766-11770 (2016) [PDF]
  • Seung-Hwan Kim, Sun-Woo Kim, Gwang-Sik Kim, Jinok Kim, Jin-Hong Park, and Hyun-Yong Yu,* "Ar Plasma Treatment for III-V Semiconductor-based Transistor Source/Drain Contact Resistance Reduction," Journal of Nanoscience and Nanotechnology, Vol.16, No.10, pp.10393-10396 (2016) [PDF]
  • Hwan-Jun Zang, Gwang-Sik Kim, Gil-Jae Park, Yong-Soo Choi, and Hyun-Yong Yu,* "Asymmetrically Contacted Germanium Photodiode Using Metal-Interlayer-Semiconductor-Metal Structure for Extremely Large Dark Current Suppression," Optics Letters, Vol.41, No.16, pp.3686-3689 (2016) [PDF]
  • Dong-Ho Kang, Seong-Taek Hong, Aely Oh, Seung-Hwan Kim, Hyun-Yong Yu, and Jin-Hong Park "Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)," Materials Research Bulletin, Vol. 82, pp. 26-30 (2016) [PDF]
  • Seo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, Jaeho Jeon, Min Hwan Jeon, Gwangwe Yoo, Jinok Kim, Jaehyeong Lee, Geun Young Yeom, Sungjoo Lee, Hyun-Yong Yu, Changhwan Choi, and Jin-Hong Park, "High Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique," Advanced Materials, Vol. 28, No.24, pp.4824-4831 (2016) [PDF]
  • Gwang-Sik Kim, Gwangwe Yoo, Yujin Seo, Seung-Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin-Hong Park, and Hyun-Yong Yu,* "Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure," IEEE Electron Device Letters, Vol.37, No.6, pp.709-712 (2016) [PDF]
  • Juhan Ahn, Jeong-Kyu Kim, Sun-Woo Kim, Gwang-Sik Kim, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, and Hyun-Yong Yu,* "Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10 nm n-type Ge FinFET," IEEE Electron Device Letters, Vol.37, No.6, pp.705-708 (2016) [PDF]
  • Changho Shin, Jeong-Kyu Kim, Changhwan Shin, Jong-Kook Kim, and Hyun-Yong Yu,* "Threshold Voltage Variation-Immune FinFET Design with Metal-Interlayer-Semiconductor Source/Drain Structure," Current Applied Physics, Vol.16, No.6, pp.618-622 (2016) [PDF]
  • Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, Jeong-Kyu Kim, Changhwan Choi, Jin-Hong Park, Rino Choi, and Hyun-Yong Yu,* "Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure with SF6 Plasma Treatment," IEEE Electron Device Letters, Vol.37, No.4, pp.373-376 (2016) [PDF]
  • Hyung-Youl Park, Woo-Shik Jung, Dong-Ho Kang, Jaeho Jeon, Gwangwe Yoo, Yongkook Park, Jinhee Lee, Yun Hee Jang, Jaeho Lee, Seongjun Park, Hyun-Yong Yu, Byungha Shin, Sungjoo Lee, and Jin-Hong Park, "Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design," Advanced Materials, Vol.28, pp.864-870 (2016) [PDF] [Supplement]
  • Jaewoo Shim, Gwangwe Yoo, Dong-Ho Kang, Woo-Shik Jung, Young-Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo Jong, Yu, Hyun-Yong Yu, Yongkook Park, and Jin-Hong Park "Theoretical and Experimental Investigation of Graphene/High-k/p-Si Junctions," IEEE Electron Device Letters, Vol.37, No.1, pp.4-7 (2016) [PDF]
2015
  • Yujin Seo, Sukwon Lee, Seung-heon Chris Baek, Wan Sik Hwang, Hyun-Yong Yu, Seok-Hee Lee, and Byung Jin Cho, "The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts," IEEE Electron Device Letters, Vol.36, No.10, pp.997-1000 (2015) [PDF]
  • Seung-Hwan Kim, Gwang-Sik Kim, Jeong-Kyu Kim, Jin-Hong Park, Changhwan Shin, Changhwan Choi, and Hyun-Yong Yu*, "Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High Electron Mobility Transistors," IEEE Electron Device Letters, Vol.36, No.9, pp.884-886 (2015) [PDF]
  • Gwang-Sik Kim, Seung-Hwan Kim, Jeong-Kyu Kim, Changhwan Shin, Jin-Hong Park, Krishna C. Saraswat, Byung Jin Cho, and Hyun-Yong Yu*, "Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET," IEEE Electron Device Letters, Vol.36, No.8, pp.745-747 (2015) [PDF]
  • Dong-Ho Kang, Myung-Soo Kim, Jaewoo Shim, Jeaho Jeon, Hyung-Youl Park, Woo-Shik Jung, Hyun-Yong Yu, Chang-Hyun Pang, Sungjoo Lee, and Jin-Hong Park, "High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping," Advanced Functional Materials, Vol.25, No.27, pp.4219-4227 (2015) [PDF] [Supplement]
  • Jaesung Jo, Woo Young Choi, Jung-Dong Park, Jae Won Shim, Hyun-Yong Yu, and Changhwan Shin, "Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices," ACS Nano Letters, Vol.15, No.7, pp.4553-4556 (2015) [PDF] [Supplement]
  • Hyung-Youl Park, Jin-Sang Yoon, Jeaho Jeon, Jinok Kim, Hyun-Yong Yu, Sungjoo Lee, and Jin-Hong Park, "Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene," Organic Electronics, Vol.22, pp.117-121 (2015) [PDF]
  • Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Rino Choi, Hyun-Yong Yu, and Changhwan Choi, "Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing," Microelectronic Engineering, Vol.147, pp.239-243 (2015) [PDF]
  • Na Liu, Ki Nam Yun, Hyun-Yong Yu, Joon Hyung Shim, and Cheol Jin Lee, "High-performance carbon nanotube thin-film transistors on flexible paper substrate," Applied Physics Letters, Vol.106, No.10, p.103106 (2015) [PDF]
  • Feyza B. Oruc, Levent E. Aygun, Inci Donmez, Necmi Biyikli, Ali K. Okyay, and Hyun-Yong Yu, "Low temperature atomic layer deposited ZnO photo thin film transistors," Journal of Vacuum Science & Technology A, Vol.33, No.1, p.01A105 (2015) [PDF]
2014
  • Jeong-Kyu Kim, Gwang-Sik Kim, Hyohyun Nam, Changhwan Shin, Jin-Hong Park, Jong-Kook Kim, Byung Jin Cho, Krishna. C. Saraswat, and Hyun-Yong Yu*, "The Efficacy of Metal-Interfacial layer-Semiconductor Source/Drain Structure on Sub-10nm n-type Ge FinFET Performances," IEEE Electron Device Letters, Vol.35, No.12, pp.1185-1187 (2014) [PDF]
  • Gwang-Sik Kim, Jeong-Kyu Kim, Seung-Hwan Kim, Jaesung Jo, Changhwan Shin, Jin-Hong Park, Krishna C. Saraswat, and Hyun-Yong Yu*, "Specific Contact Resistivity Reduction through Ar Plasma-Treated TiO2-x Interfacial Layer to Metal/Ge Contact," IEEE Electron Device Letters, Vol.35, No.11, pp.1076-1078 (2014) [PDF]
  • Jaewoo Shim, Dong-Ho Kang, Gwangwe Yoo, Seong-Teak Hong, Woo-Shik Jung, Bong Jin Kuh, Beomsuk Lee, Dongjae Shin, Kyoungho Ha, Gwang-Sik Kim, Hyun-Yong Yu, Jungwoo Baek, and Jin-Hong Park, "Germanium p-i-n Avalanche Photo-detector fabricated by Point Defect Healing Process," Optics Letters, Vol.39, No.14, pp.4204-4207 (2014) [PDF]
  • Jeong-Kyu Kim, Gwang-Sik Kim, Changhwan Shin, Jin-Hong Park, K. C. Saraswat, and Hyun-Yong Yu*, "Analytical Study of Interfacial Layer Doping Effect on Contact Resistivity in Metal-Interfacial Layer-Ge Structure," IEEE Electron Device Letters, Vol.35, No.7, pp.705-707 (2014) [PDF]
2013
  • Hyun-Yong Yu*, E. Battal, A. K. Okyay, Jaewon Shim, Jin-Hong Park, Jung Woo Baek, K. C. Saraswat, "Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers," Current Applied Physics, Vol.13, p.1060 (2013) [PDF]
  • Seong-Uk Yang, Seung-Ha Choi, Jongtaer Lee, Jeehwan Kim, Woo-Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin-Hong Park, "Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode," Journal of Alloys and Compounds, Vol.561, p.228 (2013) [PDF]
  • Hyun-Wook Jung, Woo-Shik Jung, Hyun-Yong Yu, Jin-Hong Park, "Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization," Journal of Alloys and Compounds, Vol.561, p.231 (2013) [PDF]
  • In-Yeal Lee, Hyung-Youl Park, Jin-Hyung Park, Jinyeong Lee, Woo-Shik Jung, Hyun-Yong Yu, Sang-Woo Kim, Gil-Ho Kim, Jin-Hong Park, "Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter," Organic Electronics, Vol.14, p.1586 (2013) [PDF]
2012
  • J. Shin, J. Shim, J. Lee, S.-H. Choi, W.-S Jung, Hyun-Yong Yu, Y. Roh, J.-H. Park, "Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction," IEEE Electron Device Letters, Vol.33, No.10, pp.1363-1365 (2012) [PDF]
  • S. Jeong, H. Park, M. Lim, W. Jung, Hyun-Yong Yu, Y. Roh, J.-H. Park, "Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions," Organic Electronics, Vol.13, No.9, pp.1511-1515 (2012) [PDF]
  • M.-H. Lim, I.-Y Lee, S.-G. Jeong, J. Lee, W.-S. Jung, Hyun-Yong Yu, G.-H Kim, Y. Roh, J.-H. Park, "Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain," Organic Electronics, Vol.13, No.6, pp.1056-1059 (2012) [PDF]
  • Hyun-Yong Yu*, A. K. Okyay, J.-H. Park, K.C. Saraswat, "Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics," IEEE Electron Device Letters, Vol.33, No.4, pp.579-581 (2012) [PDF]
  • E. Onaran, M. C. Onbasli, A Yesilyurt, Hyun-Yong Yu, A. M. Nayfeh, A. K. Okyay, "Silicon-Germanium multi-quantum well photodetectors in the near infrared," Optics Express, Vol.20, No.7, pp.7608-7615 (2012) [PDF]
2011
  • J.-H Park, D. Kuzum, Hyun-Yong Yu, and K. C. Saraswat, "Optimization of Germanium (Ge) n+/p and p+/n Junction Diodes and Sub 380°C Ge CMOS Technology for Monolithic 3D Integration," IEEE Transactions on Electron Devices, Vol.58, No.8, pp.2394-2400 (2011) [PDF]
  • S.-L Cheng, G. Shambat, J. Lu, Hyun-Yong Yu, Krishna Saraswat, T. I. Kamins, J. Vuckovic, and Y. Nishi, "Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon," Applied Physics Letters, Vol.98, p.211101 (2011) [PDF]
  • J.-H Park, and Hyun-Yong Yu, "Dark-Current Suppression in Erbium-Germanium-Erbium Photodetector with Asymmetric Electrode Area," Optics Letters, Vol.36, No.7, pp.1182-1184 (2011) [PDF]
  • Hyun-Yong Yu*, M. Kobayashi, J.-H. Park, Y. Nishi, K. C. Saraswat, "Novel Germanium n-MOSFETs with Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration," IEEE Electron Device Letters, Vol.32, No.4, pp.446-448 (2011) [PDF]
2010
  • S.-L Cheng, J. Lu, G. Shambat, Hyun-Yong Yu, K. C. Saraswat, J. Vuckovic, and Y. Nishi, "Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si," ECS Transactions, Vol.33, No.6, pp.545-554 (2010). [PDF]
  • Hyun-Yong Yu*, S. Cheng, J.-H. Park, A. K. Okyay, M. Onbasli, B. Ercan, Y. Nishi, and K.C. Saraswat, "High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing," Applied Physics Letters, Vol.97, p.063503 (2010) [PDF]
2009
  • Hyun-Yong Yu*, D. Kim, S. Ren, M. Kobayashi, D. A. B. Miller, Y. Nishi, K.C.Sarasawt, "Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si," Applied Physics Letters, Vol.95, p.161106 (2009) [PDF]
  • Hyun-Yong Yu*, S. Ren, W. Jung, D. A. B. Miller, K.C.Sarasawt, "High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration," IEEE Electron Device Letters, Vol.30, No.11, p.1161 (2009) [PDF]
  • Hyun-Yong Yu*, S. Cheng, P. B. Griffin, Y. Nishi, K.C. Saraswat, "Germanium in-situ doped epitaxial growth on Si for high performance n+/p junction diode," IEEE Electron Device Letters, Vol.30, No.9, p.1002 (2009) [PDF]
  • S. Cheng, J. Lu, G. Shambat, Hyun-Yong Yu, K. C. Saraswat, J. Vuckovic, Y. Nishi, "Room temperature 1.6um electroluminescence from Ge light emitting diode on Si substrate", Optics Express, Vol.17, pp.10019-10024 (2009) [PDF]
  • Hyun-Yong Yu*, M. Ishibashi, M. Kobayashi, J. Park, K.C. Saraswat, "P-channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si," IEEE Electron Device Letters, Vol.30, No.6, p.675 (2009) [PDF]